Sumiden Device Innovations Vietnam Co., Ltd

Located in Dong Nai Province - VietNam

Contact Report Errors

Sumitomo Electric Device Innovation (SEDI) is a Japanese manufacturing based company, a member under Sumitomo group. By adopting advanced know how and, at the same time, improving equipments in production process, SEDI has marketed a wide range of products which include optical devices, and wireless products… As a prestigious company that has contributed greatly to industry, SEDI formed global network. Sumiden Device Innovations Vietnam (SDIV) is the wholly owned subsidiary of SEDI. Setting up its production base in Dong Nai, SDIV specializes in manufacturing optical devices and electronics.

Company Name Sumiden Device Innovations Vietnam Co., Ltd
Alias SEDV
Category Computer, Electronic and Optical Products, Telecommunication
Address Plot 105/5, Amata Road 5, Amata Industrial Park, Long Binh Ward
District Bien Hoa
Province/City Dong Nai Province
Country VietNam
Industrial Park An Ha Industrial Park
Phone Number 061 3936 516
Fax 061 3936 520
Website www.sedi.co.jp
Tax Number 3602651420
Registration Number 3602651420
Legal Representative Shunichi Yoneyama
Registration Date 14/11/2011
Legal Structure Limited Liability Company

Link with

 
Province/City

Dong Nai Province

 
Industrial Park

An Ha Industrial Park

Location Map & Landmarks

On-sale Properties

Price:

20 - 25 million/ m²

Area:

123 - 250 m²

Location:

Nhơn Trạch, Đồng Nai

Purpose:

For Sale

Price:

70 USD/m2/38 year

Area:

28,000 m² - 130,864 m²

Location:

Nhơn Trạch, Đồng Nai

Purpose:

For Sale

NAICS/SIC/VN Code

333314

Optical Instrument and Lens Manufacturing

3827

Optical Instruments and Lenses

26700

Manufacture of optical instruments and equipment

Products of the company

STH1W74-LS/E

Part Number STH1W74-LS/E
Class Client devices > 10Gbps application  > 10Gbps DML TOSA

 

Application OC192 SR1
Pf (dBm) Typ. -3
Wavelength (nm) 1310
Ext. Ratio (dB) typ 7
Case Temperature (°C) -5 to 90

Detail
SGK5867-30A

Part Number SGK5867-30A
Class Power GaN > GaN HEMTs for Radio Link and SATCOM
Outline / Package Code IBK
Function C-Band Internally Matched GaN-HEMT
Features
  • High Output Power: P5dB=45.0dBm (Typ.)
  • High Gain; GL=13.5dB (Typ.)
  • High PAE; ηadd=45% (Typ.)
  • Broad Band; 5.85 to 6.75GHz
  • Impedance Matched Zin/Zout=50Ω
  • Hermetically Sealed Package
Description The SGK5867-30A is a high power GaN-HEMT that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
Datasheet  

 

Frequency f (GHz) 5.85-6.75
2tone test 
lM3 Typ. (dBc)
-45
2tone test 
@Pout S.C.L. (dBm)
29.5
Pout Typ. (dBm) 45
GL.Typ (dB) 13.5
η add Typ.(%) 45
VDS Typ.(V) 24
lDS(DC) Typ.(A) 1.75
lDS(RF) Typ.(A) 2.7
Rth Typ. (°C/W) 2.2
Operation Mode CW Operation
Note Tc(op)=+25°C

Detail
EMM5077VU

Part Number EMM5077VU
Class Power GaAs > C to Ka Band Power Amplifier MMICs (Packages)
Outline / Package Code VU
Function C-Band Power Amplifier MMIC
Features
  • High Output Power: Pout=31.0dBm (Typ.)
  • High Linear Gain: GL=26dB (Typ.)
  • Broad Band: 3.4 to 5.0 GHz
  • Impedance Matched Zin/Zout=50Ω
  • Small Hermetic Metal-Ceramic SMT Package (VU)
Description The EMM5077VU is a power amplifier MMIC that contains a two stage amplifier, internally matched, for standard communications band in 3.4 to 5.0GHz frequency range.
SEI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
Datasheet  

 

Frequency Range f(GHz) 3.4-5.0
Output Power at 1dB G.C.P.P1 db dBm (Typ.) 31
(f=3.4-4.2GHz)
29.5
(f=4.2-5.0GHz)
Gain at 1dB G.C.P.G1dB dB (Typ.) 25
3rd. Order Intercept Point OIP3 dBm (Typ.) 39.5
(f=3.4-4.2GHz)
38
(f=4.2-5.0GHz)
Drain-Source Voltage VDD(V) 6
IDD (DC) Typ. (mA) 1100
Drain Current at 1dB G.C.P.lDD mA (Typ.) 1200
(f=3.4-4.2GHz)
Function/Application Power Amp.Radio Link
Note Ta=+25°C

Detail
FHC30LG

Part Number FHC30LG
Class Low-noise HEMTs > GaAs HEMTs
Outline / Package Code LG

Noise figure NF Typ. (dB) 0.35
Associated Gain Gas Typ. (dB) 14.5
Drain Voltage VDS (V) 2
Drain Current lDS (mA) 10
Frequency f (GHz) 4
Application Low Noise Amp, TVRO, BTS
Note Tc(op)=+25°C

Detail
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